IGZO-Based Synaptic Device: A Seed for Artificial Intelligence Brain
IGZO-Based Synaptic Device: A Seed for Artificial Intelligence Brain
  • Reporter Lee Jin-ho
  • 승인 2023.04.17 19:26
  • 댓글 0
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▲Prof. Yoonyoung Chung (left), Prof. Seyoung Kim, First author. Seongmin Park and IGZO-based synaptic device
▲Prof. Yoonyoung Chung (left), Prof. Seyoung Kim, First author. Seongmin Park and IGZO-based synaptic device

 Artificial intelligence (AI) has revolutionized numerous industries. For example, ChatGPT, an AI platform powered by deep learning, is widely recognized for its remarkable capacity to perform various tasks, such as writing, translating, and coding, by simply answering questions. However, this process requires extensive learning, resulting in increased power consumption and delayed calculation time, thus requiring efficient semiconductor technology.
 There is a need for a high-performance AI semiconductor device that is power-efficient, durable, and accurate. To meet this demand, a research team led by Professor Yoonyoung Chung (EE, SEMI) and Prof. Seyoung Kim (MSE, SEMI) developed a high-performance AI semiconductor device that utilizes Indium-Gallium-Zinc-Oxide (IGZO) materials. Due to their excellent electron mobility and leakage current characteristics, these materials are widely used in organic light-emitting diode (OLED) displays.
 The research team developed a synaptic device with a new structure in which two transistors are connected through a storage node. They precisely adjusted this storage node's charge/discharge speed to meet various performance indicators required for AI semiconductors. Additionally, they introduced an ultra-thin insulator into the transistor to control the current, confirming that it can be used for large-scale AI operations. The team used this newly developed device to learn and classify handwriting data, proving its high accuracy of over 98%, indicating that it can be applied to high-performance AI systems in the future. This research is expected to help secure future leadership in the AI semiconductor field.
 In conclusion, the newly developed AI semiconductor device utilizing IGZO materials is a promising development in AI, which has the potential to revolutionize education and various other industries. This research is significant as it offers a solution to the power consumption and delayed calculation time in AI calculations, using materials that have already been verified for mass production. The research paper was published in Advanced Electronic Materials, an authoritative journal on electronic devices.