Doping Two-Dimensional Semiconductors with Light Illumination
Doping Two-Dimensional Semiconductors with Light Illumination
  • Reporter Ryu Nu-ri
  • 승인 2018.10.10 19:05
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‘laser doping’ of 2D atomic-layer semiconductor
‘laser doping’ of 2D atomic-layer semiconductor

 

Professor Jo Moon-ho (MSE) and his research team have developed an easy and economic ‘laser doping’ technology, which can automatically dope a two-dimensional semiconductor just by using laser light illumination. The research team has also succeeded in writing monolithic integrated circuits on a two-dimensional semiconductor.


The two-dimensional atomic-layer semiconductor, a candidate for the next generation of semiconductors, has faced technical challenges since normal doping process could not be applied to the doping process in order to create high-performance circuits. However, thanks to the study led by researcher Seo Seung-young (MSE Ph.D. Candidate), a breakthrough has been made.


The research team has succeeded in doping p-type two-dimensional semiconductors by illuminating visible light. They observed the semiconductors with a STM and illuminated a green (wavelength 532nm) laser light for several seconds on n-type semiconductors. Blank atomic spaces were made on the surface and interior of the semiconductor where the laser was shot, and into, these spaces positive holes flowed in from oxygen in the air, doping it into a p-type semiconductor.


The research team also managed to control the doping density by controlling the intensity of light and the duration of the illumination. Depending on the concentration of positive holes, the electrical conductivity of semiconductor devices can increase up to 100,000 times. The research team also succeeded in producing a variety of  two dimensional semiconductor circuits using their doping process. The manufactured semiconductor circuits showed excellent current amplification performance.


The research results were posted on the online edition of Nature Electronics, a world-renowned academic journal for electronic devices, on Sep. 14.