Using Metal Nanowire, Cross-Shaped Memristor Array Developed
Using Metal Nanowire, Cross-Shaped Memristor Array Developed
  • Reporter Park Min-young
  • 승인 2016.02.19 18:12
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Professor Lee Tae Woo (MSE) team developed the technology to make a cross-shaped memristor array, which is high density memory device. The team applied electrohydrohynamic nanowire printing (e-NW printing), which directly prints aligned nanowire array on large scale into the fabrication of memristors. The team consists of Prof. Lee, Research Professor Wentao Xu (MSE), and Yeong Jun Lee (MSE Ph.D. candidate). This research was published as a cover article in the prestigious journal of material science, Advanced Materials on Jan. 14.
With this technology, high density memory arrays can be made very fast and simply. Properties of the device and the degree of integration can be easily controlled because people can freely control the pattern or interval of nanostructures using this.