Professor Jang, Hyun Myung (MSE) and Prof. Son, Jong Yuk (Kyung Hee University) developed a “multiple” memory device that has four states using an Atomic Force Microscope (AFM) like a brush. Four (or more) states enhances components per chip in the same size of memory, saves distributed information depending on its state, and applies to memory where high-security is needed.
The high-tech memory stores only two states, such as 1 and 0 or the plus and minus poles. They had views on the fact that multiferroics become plus and minus poles in electrical and magnetic polarization respectively and made a fourfold state in one memory combining both cases. Multiferroics have electrical and magnetic phenomenon at the same time. They received attention for ease the of the use and for its simplicity of the method. They draw materials on the tip of AFM line or drop of glob in mold using arrangement of barium and titanite nanorod. Also, direction of line has no impact on efficiency and material becomes effective in room temperature.
Authoritative ACS Nano published by the American Chemical Society recently reported this result.