Although the nano-pattern had not been realized on silicon board since it is asym- metrical and its width is 1 nm, Professor Jin Kon Kim (CE) invented a me-thod that makes this procedure possible. His team worked with Prof. Venkat Ganesan at University of Texas in Austin on self-assembly method of bottom up. It is the system which can line up asymmetric nano-pattern vertically. This outcome was posted on the online edition of ACS Nano, a powerful magazine in the nano field on Aug. 28. The method can be used for lithography and applied to high density semiconductors and design of nano-circuit, offering a new way to develop lithography in the future.
Prof. Kim mentioned that he anticipates the use of the bottom up method instead of the top down method will help develop lithography.