High Performance Lithography for Semiconductor by UV Rays Developed
High Performance Lithography for Semiconductor by UV Rays Developed
  • Reporter Lee Mi-yeon
  • 승인 2018.01.01 15:35
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Professor Kim Jin-kon (CE) and Choi Chung-ryong (CE, Ph.D. Integrated) succeeded in producing various nano-patterns on a semiconductor substrate using ultraviolet light. The research team observed self-assembly properties of block copolymers to put diverse, nano-scaled patterns in a semiconductor device. However, it was a complicated procedure and entailed an enormous cost due to the character of a block copolymer, which has only one nanostructure. To overcome this limitation, they used ultraviolet light. Molecular design itself is designed to change when exposed to an ultraviolet light and it was observed that pattern actually changed by being exposed to ultraviolet light. Based on this, it is expected to solve the difficulty of implementing two or more patterns on one substrate because of the self-assembly properties of a block copolymer. Specifically, with the ability to adjust light spots through a photomask, nano patterns that have certain parts are dots and other parts are lines can be produced simultaneously. Prof. Kim said “It will benefit the next generation technology of semiconductor patterning, as it can simultaneously implement various nanostructures on one substrate needed to produce small and more integrated semiconductors.” The results of this research were published in the online edition of Nature Communications.

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